[Table of Contents]

Plasma and Fusion Research

Volume 9, 1206079 (2014)

Rapid Communications

Improvement of Electrical Device Performances for Graphene Directly Grown on a SiO2 Substrate by Plasma Chemical Vapor Deposition
Hiroo SUZUKI, Toshiaki KATO and Toshiro KANEKO
Department of Electronic Engineering, Tohoku University, Sendai 980-8579, Japan
(Received 1 April 2014 / Accepted 24 April 2014 / Published 10 June 2014)

Abstract

The electrical device performances of graphene directly grown on a SiO2 substrate have been improved through the precise adjustment of growth conditions such as growth temperature and growth time in plasma chemical vapor deposition (CVD). Only at the suitable combination of growth time and temperature, high quality and uniform graphene sheet can be directly grown on a SiO2 substrate. Forward and reverse sweeps of source-drain current (Ids) vs. gate bias voltage (Vgs) showed small hysteresis, possibly caused by the clean surface of the graphene device fabricated by plasma CVD, a technique that did not involve any transfer. Four-point probe measurements to evaluate the intrinsic sheet resistance of the fabricated graphene showed its value to be 170 - 200 Ω/sq, a value much lower than that of graphene directly grown on SiO2 substrate by other techniques. This low sheet resistance possibly originated from the high quality of graphene obtained by plasma CVD. These observations suggest that graphene directly grown on SiO2 substrate by plasma CVD should be a very promising candidate for fabrication of graphene-based high-performance electrical devices.

Keywords

graphene, direct growth, plasma CVD, four-point probe measurement

DOI: 10.1585/pfr.9.1206079

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This paper may be cited as follows:

Hiroo SUZUKI, Toshiaki KATO and Toshiro KANEKO, Plasma Fusion Res. 9, 1206079 (2014).