Plasma and Fusion Research

Volume 14, 4406144 (2019)

Regular Articles

Effect of Higher-Order Silane Deposition on Spatial Profile of Si-H2/Si-H Bond Density Ratio of a-Si:H Films
Liu SHI, Kazuma TANAKA, Hisayuki HARA, Shota NAGAISHI, Daisuke YAMASHITA, Kunihiro KAMATAKI, Naho ITAGAKI, Kazunori KOGA and Masaharu SHIRATANI
Kyushu University, Fukuoka 819-0395, Japan
(Received 7 January 2019 / Accepted 13 May 2019 / Published 9 September 2019)


We studied how the deposition of SiH3 radicals, higher-order silane molecules, and clusters contributed to the bond configuration of hydrogenated amorphous silicon (a-Si:H) films. In our experiment, the deposition of three species was controlled using a multi-hollow discharge plasma chemical vapor deposition (MHDPCVD) method using a cluster-eliminating filter. We reduced the incorporation of higher-order silane (HOS) molecules into the films by increasing the gas flow velocity in the hollows from 1008 to 2646 cm/s. The results show that the lower incorporation of HOS molecules into the films reduced the SiH2/SiH bond ratio, i.e., ISiH2/ISiH. Moreover, two-dimensional profiles of the ISiH2/ISiH ratio and the surface morphology suggest that the surface migration of HOS molecules is similar to that of the SiH3 radicals, and the ISiH2/ISiH ratio is localized by the deposition of HOS molecules. Moreover, the results of optical emission spectroscopy show that HOS radical generation is irrelevant to the gas flow velocity.


a-Si:H films, SiH2/SiH bond density ratio, plasma CVD, Raman spectroscopy, microscopic FTIR

DOI: 10.1585/pfr.14.4406144


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