Plasma and Fusion Research

Volume 13, 1406082 (2018)

Regular Articles

Effects of Gas Velocity on Deposition Rate and Amount of Cluster Incorporation into a-Si:H Films Fabricated by SiH4 Plasma Chemical Vapor Deposition
Takashi KOJIMA, Susumu TOKO, Kazuma TANAKA, Hyunwoong SEO, Naho ITAGAKI, Kazunori KOGA and Masaharu SHIRATANI
Department of Electronics, Kyushu University, Fukuoka 819-0395, Japan
(Received 7 January 2018 / Accepted 30 January 2018 / Published 25 June 2018)

Abstract

To deposit stable a-Si:H films at a high deposition rate (DR), we have studied time evolution of DR and amount of cluster incorporation (R) into films as a parameter of gas velocity, in the downstream region of a multi-hollow discharge plasma chemical vapor deposition reactor; because a-Si:H films containing less cluster incorporation show high stability. For a low gas velocity of 0.18 m/s, clusters are trapped between the multi-hollow electrode and the substrate and the trapped clusters absorb clusters and such absorption suppresses the cluster incorporation into films. By utilizing this phenomenon, we have realized a quite low R = 1.3 at a high DR = 0.06 nm/s.

Keywords

plasma CVD, cluster, a-Si:H, solar cell, laser light scattering, quartz crystal microbalance

DOI: 10.1585/pfr.13.1406082

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References

  • [1] H. Jayakumar, K. Lee, W. Suk Lee, A. Raha, Y. Kim and V. Raghunathan, Proceedings of the 2014 international symposium on Low power electronics and design, ACM (2014).
  • [2] Y.S. Long, S.T. Hsu and T.C. Wu, PVSC, 2016 IEEE 43rd. IEEE (2016).
  • [3] K. Tanaka and A. Matsuda, Mater. Sci. Rep. 2, 139 (1987).
  • [4] J. Perrin, J. Non-Cryst. Solids 137, 639 (1991).
  • [5] J.R. Abelson, Appl. Phys. A: Solids Surf. 56, 493 (1993).
  • [6] T. Matsui, A. Bidiville, K. Maejima, H. Sai, T. Koida, T. Suezaki, M. Matsumoto, K. Saito, I. Yoshida and M. Kondo, Appl. Phys. Lett. 106, 053901 (2015).
  • [7] T. Matsui, K. Maejima, A. Bidiville, H. Sai, T. Koida, T. Suezaki, M. Matsumoto, K. Saito, I. Yoshida and M. Kondo, Jpn. J. Appl. Phys. 54, 08KB10 (2015).
  • [8] H. Sai, T. Matsui and M. Koji, Appl. Phys. Lett. 109, 183506 (2016).
  • [9] M. Tsuda, S. Oikawa and K. Sato, J. Chem. Phys. 91, 6822 (1989).
  • [10] X.F.Wang, W.Z. Jia, Y.H. Songa, Y.Y. Zhang, Z.L. Dai and Y.N. Wang, Phys. Plasmas 24, 113503 (2017).
  • [11] J.P.M. Schmitt, J. Non-Cryst. Solids 59-60, 649 (1983).
  • [12] N. Itabashi, N. Nishiwaki, M. Magane, S. Naito, T. Goto, A. Matsuda, C. Yamada and E. Hirota, Jpn. J. Appl. Phys. 29, L505 (1990).
  • [13] S. Masaharu, T. Fukuzawa and Y. Watanabe, Jpn. J. Appl. Phys. Part 1 38, 4542 (1999).
  • [14] K. Koga, Y. Matsuoka, K. Tanaka, M. Shiratani and Y. Watanabe, Appl. Phys. Lett. 77, 2 (2000).
  • [15] T. Nishimoto, M. Takai, H. Miyahara, M. Kondo and A. Matsuda, J. Non-Cryst. Solids 299-302, 1116 (2002).
  • [16] S. Shimizu, H. Miyahara, M. Kondo and A. Matsuda, J. Non-Cryst. Solids 338-340, 47 (2004).
  • [17] S. Shimizu, A. Matsuda and M. Kondo, J. Appl. Phys. 101, 064911 (2007).
  • [18] M. Shiratani, K. Koga, N. Kaguchi, K. Bando and Y. Watanabe, Thin Solid Films 506-507, 17 (2006).
  • [19] K. Koga, M. Kai, M. Shiratani, Y. Watanabe and N. Shikatani, Jpn. J. Appl. Phys. 41, L168 (2002).
  • [20] M. Shiratani, K. Koga, S. Iwashita, G. Uchida, N. Itagaki and K. Kamataki, J. Phys. D: Appl. Phys. 44, 174038 (2011).
  • [21] S. Toko, Y. Torigoe, K. Keya, H. Seo, N. Itagaki, K. Koga and M. Shiratani, Jpn. J. Appl. Phys. 55, 01AA19 (2016).
  • [22] W.M. Nakamura, H. Matsuzaki, H. Sato, Y. Kawashima, K. Koga and M. Shiratani, Surf. Coatings Technol. 205, S241 (2010).
  • [23] Y. Kim, K. Hatozaki, Y. Hashimoto, H. Seo, G. Uchida, K. Kamataki, N. Itagaki, K. Koga and M. Shiratani, MRS Proc. 1426, 307 (2012).
  • [24] Y. Kim, K. Hatozaki, Y. Hashimoto, G. Uchida, K. Kamataki, N. Itagaki, H. Seo, K. Koga and M. Shiratani, Jpn. J. Appl. Phys. 152, 01AD01 (2013).
  • [25] S. Toko, Y. Torigoe, W. Chen, D. Yamashita, H. Seo, N. Itagaki, K. Koga and M. Shiratani, Thin Solid Films 587, 126 (2015).
  • [26] K. Keya, T. Kojima, Y. Torigoe, S. Toko, D. Yamashita, H. Seo, N. Itagaki, K. Koga and M. Shiratani, Jpn. J. Appl. Phys. 55, 07LE03 (2016).
  • [27] S. Toko, Y. Torigoe, K. Keya, T. Kojima, H. Seo, N. Itagaki, K. Koga and M. Shiratani, Surf. Coat. Technol. 326, 388 (2017).
  • [28] S. Nunomura, I. Sakata and M. Kondo, Appl. Phys. Express 6, 126201 (2013).
  • [29] S. Nunomura, I. Sakata and M. Kondo, Appl. Phys. Express 10, 081401 (2017).
  • [30] K.J. Clay, S.P. Speakman, G.A.J. Amaratunga and S.R.P. Silva, J. Appl. Phys. 79, 7227 (1996).
  • [31] M.N. van den Donker, B. Rech, F. Finger, W.M.M. Kessels and van de M.C.M. Sanden, Appl. Phys. Lett. 87, 263503 (2005).