Plasma and Fusion Research

Volume 7, 2402040 (2012)

Regular Articles

Microstructure of V3Ga Superconducting Wire Using Cu/V with High Ga Contents
Satoshi MURAKAMI, Kenji MATSUDA1), Tokimasa KAWABATA1), Katsuhiko NISHIMURA1), Yoshimitsu HISHINUMA2) and Susumu IKENO3)
Graduate School of Science and Engineering for Education, University of Toyama, 3190 Gofuku, Toyama 930-8555, Japan
1)
Graduate School of Science and Engineering for Research, University of Toyama, 3190 Gofuku, Toyama 930-855, Japan
2)
National Institute for Fusion Science, Toki, Gifu 502-5292, Japan
3)
Hokuriku Polytechnic College, Uozu, Toyama 937-0856, Japan
(Received 1 December 2011 / Accepted 1 March 2012 / Published 10 May 2012)

Abstract

Hishinuma et al. has established a new Powder-In-Tube (PIT) process using a high Ga content Cu-Ga compound in order to improve the superconducting property of the V3Ga compound wire. In this study, we investigated the microstructure of this high Ga content Cu-Ga/V composite superconducting wire. Three different contrasts of the matrix, V-Ga phase and Cu-Ga core were observed by SEM observation in the cross section of 19-multifilament wire. The V-Ga phase was confirmed by SEM mapping. The area fraction of V-Ga phase increased when Ga content increased from 30% to 50%. Thin film sample with V-Ga phase for TEM observation was fabricated by FIB. Selected area diffraction pattern was obtained for V matrix, V-Ga phase and Cu-Ga core. The ratio of V to Ga in V-Ga phase was close to V3Ga according to the EDS result. The interface between V matrix and V-Ga phase was linear, while the interface between Cu-Ga core and V-Ga phase was not linear. On the other hand, there were some granular grains observed in V-Ga phase around Cu-Ga core.

Keywords

V3Ga, superconducting wire, TEM, PIT

DOI: 10.1585/pfr.7.2402040

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References

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This paper may be cited as follows:

Satoshi MURAKAMI, Kenji MATSUDA, Tokimasa KAWABATA, Katsuhiko NISHIMURA, Yoshimitsu HISHINUMA and Susumu IKENO, Plasma Fusion Res. 7, 2402040 (2012).