Plasma and Fusion Research

Volume 4, 055 (2009)

Letters

Adhesion Strength of TiN Stacked TiO2 Film Correlated with Contact Angle, Critical Load, and XPS Spectra
Shankar PARAJULEE, Masahiro HAYAKAWA and Shunjiro IKEZAWA
Department of Electrical and Electronic Engineering, Graduate School of Engineering, Chubu University, Kasugai, Aichi 487-8501, Japan
(Received 21 July 2009 / Accepted 23 October 2009 / Published 8 December 2009)

Abstract

In order to coat TiO2 and TiN/TiO2 films on glass over a large surface area for industrial application, plasma gun and magnetron sputtering processes were used. Also, nitrogen radicals were synthesized on the surface via the atmospheric plasma process. Hydrophilic characteristics were studied via water contact angle. Film adherence was tested via single stylus scratch tester. We also compared the XPS spectra between the nitrogen-synthesized and non-synthesized film and obtained the Ti2p peak shift towards the higher energy level proportional to film adherence. For photocatalytic film durability, the relationship best described, “the higher the critical load, the lower the contact angle, and the higher the binding energy” has become a unique interrelationship among the scratch tester, contact angle, and XPS spectra.

Keywords

single stylus scratch tester, contact angle, XPS spectra, nitrogen incorporation

DOI: 10.1585/pfr.4.055

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References

  • [1] C. Weaver, Chem. Ind. (NY) 1, 370 (1965).
  • [2] B.N. Chapman, J. Vac. Sci. Technol. 11, 106 (1974).
  • [3] O.S. Heavens, J. Phys. Radium. 11, 355 (1950).
  • [4] P. Benjamin and C. Weaver, Proc. R. Soc. London, Ser. A 254, 163 (1960).
  • [5] P. Benjamin and C. Weaver, Proc. R. Soc. London, Ser. A 274, 267 (1963).
  • [6] C. Weaver, J. Vac. Sci. Technol. 12, 18 (1975).
  • [7] H. Homyara and S. Ikezawa, Recent Research Developments in Vac. Sci. Technol. 4, 61 (2003).
  • [8] A.J. Perry, Thin Solid Films 107, 167 (1983).
  • [9] S. Parajulee and S. Ikezawa, Industrial Application of Plasma Process 1, 17 (2008).
  • [10] S. Parajulee and S. Ikezawa, Industrial Application of Plasma Process 1, 27 (2008).
  • [11] P. Asteinman, P. Laeng and H.E. Hintermann, Mater. Tech. 13, 85 (1985).
  • [12] P. Laeng and P.A. Steinmann, Proceeding of the 8th International Conference on Chemical Vapor Deposition, Paris, 1981 (Electro-chemical Society, Pennington, N.J., 1981) p.723.
  • [13] B. Hammer, P. Laeng and P.A. Steinman, Thin Solid Films 96, 45 (1982).
  • [14] K.L. Chopra, in Thin Film Phenomena (McGraw-Hill, New York, 1969) p.313.
  • [15] A. Pan and J.E. Greene, Thin Solid Films 97, 79 (1982).
  • [16] P.A. Steinmann and H.E. Hintermann, J. Vac. Sci. Technol. 3, 323 (1985).
  • [17] M. Takeuchi, S. Doshi and T. Eura, J. Phy. Chem. B 107, 14278 (2003).
  • [18] R.P. Netterfield, P.J. Martin, et al., J. Appl. Phys. 66, 1805 (1989).
  • [19] M. Andrulevicius and S. Tamulevicius, Material Science 14, 8 (2008).

This paper may be cited as follows:

Shankar PARAJULEE, Masahiro HAYAKAWA and Shunjiro IKEZAWA, Plasma Fusion Res. 4, 055 (2009).