Plasma and Fusion Research
Volume 4, 048 (2009)
Review Articles
- Institute of Laser Engineering, Osaka University, 2-6 Yamada-oka, Suita, Osaka, Japan
- 1)
- Institute for Laser Technology, 2-6 Yamada-oka, Suita, Osaka, Japan
Abstract
Extreme ultraviolet lithography (EUVL) is a technology to be used in mass production of the next-generation semiconductor devices. Critical issues in the development of a Sn-based EUV source are in achieving a high conversion efficiency (CE) of incident laser energy into EUV light, reducing debris emanating from light source plasmas, and suppressing out-of-band radiation beside the EUV light. The minimum-mass target, which contains the minimum number of Sn atoms required for sufficient EUV radiation, is a solution to these critical issues. One practical-minimum mass target is a pure Sn microdroplet. Laser-driven expansion of a pure Sn microdroplet is proposed to solve the considerable mismatch between the optimal laser spot diameter (300 µm) and the diameter (20 µm) of microdroplets containing the minimum-mass Sn fuel for generating the required EUV radiant energy (10 mJ/pulse). An expanded microdroplet was irradiated with a CO2 laser pulse to generate EUV light. A combination of low density and long scale length of the expanded microdroplet leads to a higher EUV energy CE (4%) than that (2.5%) obtained from planar Sn bulk targets irradiated by a single CO2 laser pulse. This scheme can be used to produce a practical EUV light source system with an EUV CE of 3.9%.
Keywords
extreme ultraviolet light, laser-produced plasma, x-ray radiation source
Full Text
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This paper may be cited as follows:
Shinsuke FUJIOKA, Hiroaki NISHIMURA, Katsunobu NISHIHARA, Noriaki MIYANAGA, Yasukazu IZAWA, Kunioki MIMA, Yoshinori SHIMADA and Atsushi SUNAHARA, Plasma Fusion Res. 4, 048 (2009).